1/8 august 2002 STW45NM60 n-channel 600v - 0.09 w - 45a to-247 mdmesh?power mosfet n typical r ds (on) = 0.09 w n high dv/dt and avalanche capabilities n 100% avalanche tested n low input capacitance and gate charge n low gate input resistance n tight process control and high manufacturing yields description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STW45NM60 600v < 0.11 w 45 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20 k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 45 a i d drain current (continuous) at t c = 100c 28 a i dm ( l ) drain current (pulsed) 180 a p tot total dissipation at t c = 25c 417 w derating factor 3.33 w/c dv/dt (1) peak diode recovery voltage slope 15 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1) i sd 45a, di/dt 400a/s, v dd v (br)dss , t j t jmax. 1 2 3 to-247 internal schematic diagram
STW45NM60 2/8 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss rthj-case thermal resistance junction-case max 0.3 c/w rthj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 15 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 35 v) 850 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 10 a v ds = max rating, t c = 125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 22.5a 0.09 0.11 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 22.5a 15 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 3800 pf c oss output capacitance 1250 pf c rss reverse transfer capacitance 46 pf c oss eq. (2) equivalent output capacitance v gs = 0v, v ds = 0v to 480v 340 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 1.4 w
3/8 STW45NM60 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 22.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 30 ns t r rise time 20 ns q g total gate charge v dd = 400v, i d = 45a, v gs = 10v 96 134 nc q gs gate-source charge 31 nc q gd gate-drain charge 43 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 45a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 16 ns t f fall time 23 ns t c cross-over time 40 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 45 a i sdm (2) source-drain current (pulsed) 180 a v sd (1) forward on voltage i sd = 45a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 45a, di/dt = 100a/s, v dd = 100 v, t j = 25c (see test circuit, figure 5) 508 10 40 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 45a, di/dt = 100a/s, v dd = 100 v, t j = 150c (see test circuit, figure 5) 650 14 43 ns c a thermal impedance safe operating area
STW45NM60 4/8 gate charge vs gate-source voltage capacitance variations transconductance static drain-source on resistance output characteristics transfer characteristics
5/8 STW45NM60 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STW45NM60 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STW45NM60 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5 o5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
STW45NM60 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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